GAN140-650EBEZ
detaildesc

GAN140-650EBEZ

Nexperia USA Inc.

Product No:

GAN140-650EBEZ

Manufacturer:

Nexperia USA Inc.

Package:

DFN8080-8

Datasheet:

pdf

Description:

650 V, 140 MOHM GALLIUM NITRIDE

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 1584

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.843

    $3.843

  • 10

    $3.4587

    $34.587

  • 50

    $3.0744

    $153.72

  • 100

    $2.6901

    $269.01

  • 500

    $2.61324

    $1306.62

  • 1000

    $2.562

    $2562

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 125 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 3.5 nC @ 6 V
Mounting Type Surface Mount, Wettable Flank
Rds On (Max) @ Id, Vgs 140mOhm @ 5A, 6V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 17.2mA
Supplier Device Package DFN8080-8
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 113W (Ta)
Series -
Package / Case 8-VDFN Exposed Pad
Technology GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C 17A (Ta)
Mfr Nexperia USA Inc.
Vgs (Max) +7V, -1.4V
Drive Voltage (Max Rds On, Min Rds On) 6V
Package Tape & Reel (TR)
Base Product Number GAN140