GC20N65F

Goford Semiconductor

Product No:

GC20N65F

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Package:

TO-220F

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Description:

N650V,RD(MAX)<170M@10V,VTH2.5V~4

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1724 pF @ 100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	170mOhm @ 10A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 250µA
Supplier Device Package	TO-220F
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	34W (Tc)
Series	-
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube