GP2T080A120H
SemiQ
Product No:
GP2T080A120H
Manufacturer:
Package:
TO-247-4
Datasheet:
Description:
SIC MOSFET 1200V 80M TO-247-4L
Quantity:
Delivery:
Payment:
In Stock : 75
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$11.65878
$11.65878
10
$10.492902
$104.92902
50
$9.327024
$466.3512
100
$8.161146
$816.1146
500
$7.92797
$3963.985
1000
$7.77252
$7772.52
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1377 pF @ 1000 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 20 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 20V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 10mA |
| Supplier Device Package | TO-247-4 |
| Drain to Source Voltage (Vdss) | 1200 V |
| Power Dissipation (Max) | 188W (Tc) |
| Series | - |
| Package / Case | TO-247-4 |
| Technology | SiCFET (Silicon Carbide) |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Mfr | SemiQ |
| Vgs (Max) | +25V, -10V |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Package | Tube |
| Base Product Number | GP2T080A |
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