GT011N03D5E

Goford Semiconductor

Product No:

GT011N03D5E

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Package:

8-DFN (4.9x5.75)

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Description:

MOSFET N-CH ESD 30V 209A DFN5*6-

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	6503 pF @ 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	98 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	-
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	8-DFN (4.9x5.75)
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	89W (Tc)
Series	-
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	209A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±16V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)