GT025N06D5

Goford Semiconductor

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GT025N06D5

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Package:

8-DFN (5.2x5.86)

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Description:

N60V,RD(MAX)<2.7M@10V,RD(MAX)<3.

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	5950 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	93 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2.7mOhm @ 20A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	8-DFN (5.2x5.86)
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	120W (Tc)
Series	-
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	95A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)