GT10N10
Goford Semiconductor
Product No:
GT10N10
Manufacturer:
Package:
TO-252
Datasheet:
Description:
N100V, 7A,RD<140M@10V,VTH1.5V~2.
Quantity:
Delivery:
Payment:
In Stock : 615
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.148764
$0.148764
10
$0.130169
$1.30169
50
$0.111573
$5.57865
100
$0.102275
$10.2275
500
$0.097627
$48.8135
1000
$0.092978
$92.978
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 206 pF @ 50 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 4.3 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 3.5A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-252 |
| Drain to Source Voltage (Vdss) | 100 V |
| Power Dissipation (Max) | 17W (Tc) |
| Series | GT |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Mfr | Goford Semiconductor |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Tape & Reel (TR) |
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