GT30J121(Q)
detaildesc

GT30J121(Q)

Toshiba Semiconductor and Storage

Product No:

GT30J121(Q)

Package:

TO-3P(N)

Datasheet:

-

Description:

IGBT 600V 30A 170W TO3PN

Quantity:

Delivery:

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Payment:

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In Stock : 108

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.401875

    $2.401875

  • 10

    $2.161688

    $21.61688

  • 50

    $1.9215

    $96.075

  • 100

    $1.681312

    $168.1312

  • 500

    $1.633275

    $816.6375

  • 1000

    $1.60125

    $1601.25

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Product Information

Parameter Info

User Guide

Input Type Standard
Test Condition 300V, 30A, 24Ohm, 15V
Switching Energy 1mJ (on), 800µJ (off)
Current - Collector (Ic) (Max) 30 A
Mounting Type Through Hole
Voltage - Collector Emitter Breakdown (Max) 600 V
Product Status Active
Td (on/off) @ 25°C 90ns/300ns
Supplier Device Package TO-3P(N)
Current - Collector Pulsed (Icm) 60 A
Series -
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 30A
Package / Case TO-3P-3, SC-65-3
Power - Max 170 W
Mfr Toshiba Semiconductor and Storage
Package Tube
IGBT Type -
Base Product Number GT30J121