GT50JR21(STA1,E,S)

Toshiba Semiconductor and Storage

Product No:

GT50JR21(STA1,E,S)

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Package:

TO-3P(N)

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Description:

PB-F IGBT / TRANSISTOR TO-3PN(OS

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Operating Temperature	175°C (TJ)
Input Type	Standard
Test Condition	-
Switching Energy	-
Current - Collector (Ic) (Max)	50 A
Mounting Type	Through Hole
Voltage - Collector Emitter Breakdown (Max)	600 V
Product Status	Active
Td (on/off) @ 25°C	-
Supplier Device Package	TO-3P(N)
Current - Collector Pulsed (Icm)	100 A
Series	-
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 50A
Package / Case	TO-3P-3, SC-65-3
Power - Max	230 W
Mfr	Toshiba Semiconductor and Storage
Package	Tube
IGBT Type	-