GT50N322A
detaildesc

GT50N322A

Toshiba Semiconductor and Storage

Product No:

GT50N322A

Package:

TO-3P(N)

Datasheet:

-

Description:

PB-F IGBT / TRANSISTOR TO-3PN IC

Quantity:

Delivery:

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Payment:

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In Stock : 28

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.445155

    $3.445155

  • 10

    $3.10064

    $31.0064

  • 50

    $2.756124

    $137.8062

  • 100

    $2.411608

    $241.1608

  • 500

    $2.342705

    $1171.3525

  • 1000

    $2.29677

    $2296.77

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
Input Type Standard
Test Condition -
Reverse Recovery Time (trr) 800 ns
Switching Energy -
Current - Collector (Ic) (Max) 50 A
Mounting Type Through Hole
Voltage - Collector Emitter Breakdown (Max) 1000 V
Product Status Active
Td (on/off) @ 25°C -
Supplier Device Package TO-3P(N)
Current - Collector Pulsed (Icm) 120 A
Series -
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 60A
Package / Case TO-3P-3, SC-65-3
Power - Max 156 W
Mfr Toshiba Semiconductor and Storage
Package Tray
IGBT Type -