GT55N06D5
detaildesc

GT55N06D5

Goford Semiconductor

Product No:

GT55N06D5

Manufacturer:

Goford Semiconductor

Package:

8-DFN (4.9x5.75)

Datasheet:

-

Description:

N60V,RD(MAX)<8M@10V,RD(MAX)<13M@

Quantity:

Delivery:

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Payment:

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In Stock : 1665

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.255882

    $0.255882

  • 10

    $0.223897

    $2.23897

  • 50

    $0.191912

    $9.5956

  • 100

    $0.175919

    $17.5919

  • 500

    $0.167923

    $83.9615

  • 1000

    $0.159926

    $159.926

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1988 pF @ 30 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 9mOhm @ 14A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package 8-DFN (4.9x5.75)
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 70W (Ta)
Series -
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 53A (Ta)
Mfr Goford Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)