HN3C10FUTE85LF
detaildesc

HN3C10FUTE85LF

Toshiba Semiconductor and Storage

Product No:

HN3C10FUTE85LF

Package:

US6

Datasheet:

-

Description:

RF TRANS 2 NPN 12V 7GHZ US6

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 56

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.2604

    $0.2604

  • 10

    $0.22785

    $2.2785

  • 50

    $0.1953

    $9.765

  • 100

    $0.179025

    $17.9025

  • 500

    $0.170887

    $85.4435

  • 1000

    $0.16275

    $162.75

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Product Information

Parameter Info

User Guide

Operating Temperature -
Frequency - Transition 7GHz
Current - Collector (Ic) (Max) 80mA
Mounting Type Surface Mount
Voltage - Collector Emitter Breakdown (Max) 12V
Product Status Active
Supplier Device Package US6
Series -
Transistor Type 2 NPN (Dual)
Package / Case 6-TSSOP, SC-88, SOT-363
Power - Max 200mW
Mfr Toshiba Semiconductor and Storage
Noise Figure (dB Typ @ f) 1.1dB @ 1GHz
Package Tape & Reel (TR)
Gain 11.5dB
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 20mA, 10V
Base Product Number HN3C10