IAUC26N10S5L245ATMA1

Infineon Technologies

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PG-TDSON-8-33

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MOSFET_(75V 120V( PG-TDSON-8

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	762 pF @ 50 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	24.5mOhm @ 13A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.2V @ 13µA
Supplier Device Package	PG-TDSON-8-33
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	40W (Tc)
Series	OptiMOS™
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	26A (Tj)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)