Infineon Technologies
Product No:
IAUS200N08S5N023ATMA1
Manufacturer:
Package:
PG-HSOG-8-1
Description:
MOSFET N-CH 80V 200A HSOG-8
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$2.496847
$2.496847
10
$2.247163
$22.47163
50
$1.997478
$99.8739
100
$1.747793
$174.7793
500
$1.697856
$848.928
1000
$1.664565
$1664.565
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Operating Temperature | -55°C ~ 175°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 7670 pF @ 40 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 2.3mOhm @ 100A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 3.8V @ 130µA |
Supplier Device Package | PG-HSOG-8-1 |
Drain to Source Voltage (Vdss) | 80 V |
Power Dissipation (Max) | 200W (Tc) |
Series | Automotive, AEC-Q101, OptiMOS™ |
Package / Case | 8-PowerSMD, Gull Wing |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 200A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Package | Tape & Reel (TR) |
Base Product Number | IAUS200 |