
Infineon Technologies
Product No:
IDH10G65C5XKSA2
Manufacturer:
Package:
PG-TO220-2-1
Datasheet:
-
Description:
DIODE SIL CARB 650V 10A TO220-1
Quantity:
Delivery:

Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$2.469012
$2.469012
10
$2.222111
$22.22111
50
$1.97521
$98.7605
100
$1.728308
$172.8308
500
$1.678928
$839.464
1000
$1.646008
$1646.008
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| Speed | No Recovery Time > 500mA (Io) |
| Capacitance @ Vr, F | 300pF @ 1V, 1MHz |
| Reverse Recovery Time (trr) | 0 ns |
| Mounting Type | Through Hole |
| Product Status | Active |
| Supplier Device Package | PG-TO220-2-1 |
| Current - Reverse Leakage @ Vr | 180 µA @ 650 V |
| Series | CoolSiC™+ |
| Package / Case | TO-220-2 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Mfr | Infineon Technologies |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Package | Tube |
| Current - Average Rectified (Io) | 10A |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Base Product Number | IDH10G65 |