IGT60R070D1ATMA4
detaildesc

IGT60R070D1ATMA4

Infineon Technologies

Product No:

IGT60R070D1ATMA4

Manufacturer:

Infineon Technologies

Package:

PG-HSOF-8-3

Datasheet:

-

Description:

GANFET N-CH

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 16

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $10.71

    $10.71

  • 10

    $9.639

    $96.39

  • 50

    $8.568

    $428.4

  • 100

    $7.497

    $749.7

  • 500

    $7.2828

    $3641.4

  • 1000

    $7.14

    $7140

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 380 pF @ 400 V
FET Type N-Channel
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs -
Product Status Active
Vgs(th) (Max) @ Id 1.6V @ 2.6mA
Supplier Device Package PG-HSOF-8-3
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 125W (Tc)
Series CoolGaN™
Package / Case 8-PowerSFN
Technology GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C 31A (Tc)
Mfr Infineon Technologies
Vgs (Max) -10V
Drive Voltage (Max Rds On, Min Rds On) -
Package Tape & Reel (TR)