Infineon Technologies
Product No:
IMBF170R650M1XTMA1
Manufacturer:
Package:
PG-TO263-7-13
Datasheet:
-
Description:
SICFET N-CH 1700V 7.4A TO263-7
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$3.586432
$3.586432
10
$3.227789
$32.27789
50
$2.869146
$143.4573
100
$2.510503
$251.0503
500
$2.438774
$1219.387
1000
$2.390955
$2390.955
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Operating Temperature | -55°C ~ 175°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 422 pF @ 1000 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 12 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 650mOhm @ 1.5A, 15V |
Product Status | Active |
Vgs(th) (Max) @ Id | 5.7V @ 1.7mA |
Supplier Device Package | PG-TO263-7-13 |
Drain to Source Voltage (Vdss) | 1700 V |
Power Dissipation (Max) | 88W (Tc) |
Series | CoolSiC™ |
Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
Technology | SiCFET (Silicon Carbide) |
Current - Continuous Drain (Id) @ 25°C | 7.4A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | +20V, -10V |
Drive Voltage (Max Rds On, Min Rds On) | 12V, 15V |
Package | Tape & Reel (TR) |
Base Product Number | IMBF170 |