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IMBG120R060M1HXTMA1
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IMBG120R060M1HXTMA1

Infineon Technologies

Product No:

IMBG120R060M1HXTMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-7-12

Datasheet:

-

Description:

SICFET N-CH 1.2KV 36A TO263

Quantity:

Delivery:

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In Stock : 1088

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $7.159478

    $7.159478

  • 10

    $6.44353

    $64.4353

  • 50

    $5.727582

    $286.3791

  • 100

    $5.011634

    $501.1634

  • 500

    $4.868445

    $2434.2225

  • 1000

    $4.772985

    $4772.985

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature Standard
Input Capacitance (Ciss) (Max) @ Vds 1145 pF @ 800 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 18 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 83mOhm @ 13A, 18V
Product Status Active
Vgs(th) (Max) @ Id 5.7V @ 5.6mA
Supplier Device Package PG-TO263-7-12
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 181W (Tc)
Series CoolSiC™
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Mfr Infineon Technologies
Vgs (Max) +18V, -15V
Package Tape & Reel (TR)
Base Product Number IMBG120