IMBG120R090M1HXTMA1
Infineon Technologies
Product No:
IMBG120R090M1HXTMA1
Manufacturer:
Package:
PG-TO263-7-12
Datasheet:
-
Description:
SICFET N-CH 1.2KV 26A TO263
Quantity:
Delivery:
Payment:
In Stock : 1939
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$5.883255
$5.883255
10
$5.29493
$52.9493
50
$4.706604
$235.3302
100
$4.118279
$411.8279
500
$4.000613
$2000.3065
1000
$3.92217
$3922.17
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | Standard |
| Input Capacitance (Ciss) (Max) @ Vds | 763 pF @ 800 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 18 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 8.5A, 18V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 5.7V @ 3.7mA |
| Supplier Device Package | PG-TO263-7-12 |
| Drain to Source Voltage (Vdss) | 1200 V |
| Power Dissipation (Max) | 136W (Tc) |
| Series | CoolSiC™ |
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Technology | SiCFET (Silicon Carbide) |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | +18V, -15V |
| Package | Tape & Reel (TR) |
| Base Product Number | IMBG120 |
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