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IMBG120R220M1HXTMA1
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IMBG120R220M1HXTMA1

Infineon Technologies

Product No:

IMBG120R220M1HXTMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-7-12

Datasheet:

-

Description:

SICFET N-CH 1.2KV 13A TO263

Quantity:

Delivery:

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In Stock : 766

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.843945

    $3.843945

  • 10

    $3.459551

    $34.59551

  • 50

    $3.075156

    $153.7578

  • 100

    $2.690761

    $269.0761

  • 500

    $2.613883

    $1306.9415

  • 1000

    $2.56263

    $2562.63

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature Standard
Input Capacitance (Ciss) (Max) @ Vds 312 pF @ 800 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 9.4 nC @ 18 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 294mOhm @ 4A, 18V
Product Status Active
Vgs(th) (Max) @ Id 5.7V @ 1.6mA
Supplier Device Package PG-TO263-7-12
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 83W (Tc)
Series CoolSiC™
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Mfr Infineon Technologies
Vgs (Max) +18V, -15V
Package Tape & Reel (TR)
Base Product Number IMBG120