Infineon Technologies
Product No:
IMBG120R220M1HXTMA1
Manufacturer:
Package:
PG-TO263-7-12
Datasheet:
-
Description:
SICFET N-CH 1.2KV 13A TO263
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$3.843945
$3.843945
10
$3.459551
$34.59551
50
$3.075156
$153.7578
100
$2.690761
$269.0761
500
$2.613883
$1306.9415
1000
$2.56263
$2562.63
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Operating Temperature | -55°C ~ 175°C (TJ) |
FET Feature | Standard |
Input Capacitance (Ciss) (Max) @ Vds | 312 pF @ 800 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 9.4 nC @ 18 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 294mOhm @ 4A, 18V |
Product Status | Active |
Vgs(th) (Max) @ Id | 5.7V @ 1.6mA |
Supplier Device Package | PG-TO263-7-12 |
Drain to Source Voltage (Vdss) | 1200 V |
Power Dissipation (Max) | 83W (Tc) |
Series | CoolSiC™ |
Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
Technology | SiCFET (Silicon Carbide) |
Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | +18V, -15V |
Package | Tape & Reel (TR) |
Base Product Number | IMBG120 |