IMBG65R030M1HXTMA1
Infineon Technologies
Product No:
IMBG65R030M1HXTMA1
Manufacturer:
Package:
PG-TO263-7-12
Datasheet:
-
Description:
SILICON CARBIDE MOSFET PG-TO263-
Quantity:
Delivery:
Payment:
In Stock : 814
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$10.166625
$10.166625
10
$9.149963
$91.49963
50
$8.1333
$406.665
100
$7.116638
$711.6638
500
$6.913305
$3456.6525
1000
$6.77775
$6777.75
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1643 pF @ 400 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 18 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 29.5A, 18V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 5.7V @ 8.8mA |
| Supplier Device Package | PG-TO263-7-12 |
| Drain to Source Voltage (Vdss) | 650 V |
| Power Dissipation (Max) | 234W (Tc) |
| Series | CoolSiC™ |
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Technology | SiCFET (Silicon Carbide) |
| Current - Continuous Drain (Id) @ 25°C | 63A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | +23V, -5V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Package | Tape & Reel (TR) |
| Base Product Number | IMBG65 |
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