IMBG65R057M1HXTMA1
Infineon Technologies
Product No:
IMBG65R057M1HXTMA1
Manufacturer:
Package:
PG-TO263-7-12
Datasheet:
-
Description:
SILICON CARBIDE MOSFET PG-TO263-
Quantity:
Delivery:
Payment:
In Stock : 626
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$6.944963
$6.944963
10
$6.250466
$62.50466
50
$5.55597
$277.7985
100
$4.861474
$486.1474
500
$4.722575
$2361.2875
1000
$4.629975
$4629.975
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 930 pF @ 400 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 18 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 74mOhm @ 16.7A, 18V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 5.7V @ 5mA |
| Supplier Device Package | PG-TO263-7-12 |
| Drain to Source Voltage (Vdss) | 650 V |
| Power Dissipation (Max) | 161W (Tc) |
| Series | CoolSiC™ |
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Technology | SiCFET (Silicon Carbide) |
| Current - Continuous Drain (Id) @ 25°C | 39A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | +23V, -5V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Package | Tape & Reel (TR) |
| Base Product Number | IMBG65 |
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