IMT65R083M1HXUMA1
Infineon Technologies
Product No:
IMT65R083M1HXUMA1
Manufacturer:
Package:
PG-HSOF-8-1
Datasheet:
-
Description:
SILICON CARBIDE MOSFET
Quantity:
Delivery:
Payment:
In Stock : 913
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$4.829265
$4.829265
10
$4.346339
$43.46339
50
$3.863412
$193.1706
100
$3.380485
$338.0485
500
$3.2839
$1641.95
1000
$3.21951
$3219.51
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Product Information
Parameter Info
User Guide
| Operating Temperature | - |
| FET Feature | - |
| FET Type | - |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | - |
| Product Status | Active |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | PG-HSOF-8-1 |
| Drain to Source Voltage (Vdss) | 650 V |
| Power Dissipation (Max) | - |
| Series | CoolSiC™ |
| Package / Case | 8-PowerSFN |
| Technology | SiCFET (Silicon Carbide) |
| Current - Continuous Drain (Id) @ 25°C | - |
| Mfr | Infineon Technologies |
| Vgs (Max) | - |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Package | Tape & Reel (TR) |
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