IMT65R107M1HXUMA1
Infineon Technologies
Product No:
IMT65R107M1HXUMA1
Manufacturer:
Package:
PG-HSOF-8-1
Datasheet:
-
Description:
SILICON CARBIDE MOSFET
Quantity:
Delivery:
Payment:
In Stock : 335
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$4.387163
$4.387163
10
$3.948446
$39.48446
50
$3.50973
$175.4865
100
$3.071014
$307.1014
500
$2.983271
$1491.6355
1000
$2.924775
$2924.775
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Product Information
Parameter Info
User Guide
| Operating Temperature | - |
| FET Feature | - |
| FET Type | - |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | - |
| Product Status | Active |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | PG-HSOF-8-1 |
| Drain to Source Voltage (Vdss) | 650 V |
| Power Dissipation (Max) | - |
| Series | CoolSiC™ |
| Package / Case | 8-PowerSFN |
| Technology | SiCFET (Silicon Carbide) |
| Current - Continuous Drain (Id) @ 25°C | - |
| Mfr | Infineon Technologies |
| Vgs (Max) | - |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Package | Tape & Reel (TR) |
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