IMT65R163M1HXUMA1
detaildesc

IMT65R163M1HXUMA1

Infineon Technologies

Product No:

IMT65R163M1HXUMA1

Manufacturer:

Infineon Technologies

Package:

PG-HSOF-8-1

Datasheet:

-

Description:

SILICON CARBIDE MOSFET

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 898

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.12165

    $3.12165

  • 10

    $2.809485

    $28.09485

  • 50

    $2.49732

    $124.866

  • 100

    $2.185155

    $218.5155

  • 500

    $2.122722

    $1061.361

  • 1000

    $2.0811

    $2081.1

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info

User Guide

Operating Temperature -
FET Feature -
FET Type -
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs -
Product Status Active
Vgs(th) (Max) @ Id -
Supplier Device Package PG-HSOF-8-1
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) -
Series CoolSiC™
Package / Case 8-PowerSFN
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C -
Mfr Infineon Technologies
Vgs (Max) -
Drive Voltage (Max Rds On, Min Rds On) 18V
Package Tape & Reel (TR)