Home / Single FETs, MOSFETs / IMW120R220M1HXKSA1
IMW120R220M1HXKSA1
detaildesc

IMW120R220M1HXKSA1

Infineon Technologies

Product No:

IMW120R220M1HXKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO247-3-41

Datasheet:

-

Description:

SICFET N-CH 1.2KV 13A TO247-3

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 732

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $4.2588

    $4.2588

  • 10

    $3.83292

    $38.3292

  • 50

    $3.40704

    $170.352

  • 100

    $2.98116

    $298.116

  • 500

    $2.895984

    $1447.992

  • 1000

    $2.8392

    $2839.2

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 289 pF @ 800 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 8.5 nC @ 18 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 286mOhm @ 4A, 18V
Product Status Active
Vgs(th) (Max) @ Id 5.7V @ 1.6mA
Supplier Device Package PG-TO247-3-41
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 75W (Tc)
Series CoolSiC™
Package / Case TO-247-3
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Mfr Infineon Technologies
Vgs (Max) +23V, -7V
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Package Tube
Base Product Number IMW120