IMW120R350M1HXKSA1
Infineon Technologies
Product No:
IMW120R350M1HXKSA1
Manufacturer:
Package:
PG-TO247-3-41
Datasheet:
-
Description:
SICFET N-CH 1.2KV 4.7A TO247-3
Quantity:
Delivery:
Payment:
In Stock : 620
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$3.655575
$3.655575
10
$3.290018
$32.90018
50
$2.92446
$146.223
100
$2.558903
$255.8903
500
$2.485791
$1242.8955
1000
$2.43705
$2437.05
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 182 pF @ 800 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 5.3 nC @ 18 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 455mOhm @ 2A, 18V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 5.7V @ 1mA |
| Supplier Device Package | PG-TO247-3-41 |
| Drain to Source Voltage (Vdss) | 1200 V |
| Power Dissipation (Max) | 60W (Tc) |
| Series | CoolSiC™ |
| Package / Case | TO-247-3 |
| Technology | SiCFET (Silicon Carbide) |
| Current - Continuous Drain (Id) @ 25°C | 4.7A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | +23V, -7V |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Package | Tube |
| Base Product Number | IMW120 |
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