IMZ120R030M1HXKSA1

Infineon Technologies

Product No:

IMZ120R030M1HXKSA1

Manufacturer:

Package:

PG-TO247-4-1

Datasheet:

Description:

SICFET N-CH 1.2KV 56A TO247-4

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2120 pF @ 800 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	63 nC @ 18 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	40mOhm @ 25A, 18V
Product Status	Active
Vgs(th) (Max) @ Id	5.7V @ 10mA
Supplier Device Package	PG-TO247-4-1
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	227W (Tc)
Series	CoolSiC™
Package / Case	TO-247-4
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	56A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	+23V, -7V
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Package	Tube
Base Product Number	IMZ120