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IMZ120R060M1HXKSA1
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IMZ120R060M1HXKSA1

Infineon Technologies

Product No:

IMZ120R060M1HXKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO247-4-1

Datasheet:

-

Description:

SICFET N-CH 1.2KV 36A TO247-4

Quantity:

Delivery:

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Payment:

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In Stock : 187

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $8.047935

    $8.047935

  • 10

    $7.243142

    $72.43142

  • 50

    $6.438348

    $321.9174

  • 100

    $5.633554

    $563.3554

  • 500

    $5.472596

    $2736.298

  • 1000

    $5.36529

    $5365.29

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1060 pF @ 800 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 18 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 78mOhm @ 13A, 18V
Product Status Active
Vgs(th) (Max) @ Id 5.7V @ 5.6mA
Supplier Device Package PG-TO247-4-1
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 150W (Tc)
Series CoolSiC™
Package / Case TO-247-4
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Mfr Infineon Technologies
Vgs (Max) +23V, -7V
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Package Tube
Base Product Number IMZ120