Infineon Technologies
Product No:
IMZ120R060M1HXKSA1
Manufacturer:
Package:
PG-TO247-4-1
Datasheet:
-
Description:
SICFET N-CH 1.2KV 36A TO247-4
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$8.047935
$8.047935
10
$7.243142
$72.43142
50
$6.438348
$321.9174
100
$5.633554
$563.3554
500
$5.472596
$2736.298
1000
$5.36529
$5365.29
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Operating Temperature | -55°C ~ 175°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 800 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 18 V |
Mounting Type | Through Hole |
Rds On (Max) @ Id, Vgs | 78mOhm @ 13A, 18V |
Product Status | Active |
Vgs(th) (Max) @ Id | 5.7V @ 5.6mA |
Supplier Device Package | PG-TO247-4-1 |
Drain to Source Voltage (Vdss) | 1200 V |
Power Dissipation (Max) | 150W (Tc) |
Series | CoolSiC™ |
Package / Case | TO-247-4 |
Technology | SiCFET (Silicon Carbide) |
Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | +23V, -7V |
Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
Package | Tube |
Base Product Number | IMZ120 |