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IMZA120R014M1HXKSA1
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IMZA120R014M1HXKSA1

Infineon Technologies

Product No:

IMZA120R014M1HXKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO247-4-8

Datasheet:

-

Description:

SIC DISCRETE

Quantity:

Delivery:

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Payment:

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In Stock : 459

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $28.159425

    $28.159425

  • 10

    $25.343483

    $253.43483

  • 50

    $22.52754

    $1126.377

  • 100

    $19.711597

    $1971.1597

  • 500

    $19.148409

    $9574.2045

  • 1000

    $18.77295

    $18772.95

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 4580 nF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 18 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 18.4mOhm @ 54.3A, 18V
Product Status Active
Vgs(th) (Max) @ Id 5.2V @ 23.4mA
Supplier Device Package PG-TO247-4-8
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 455W (Tc)
Series CoolSiC™
Package / Case TO-247-4
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 127A (Tc)
Mfr Infineon Technologies
Vgs (Max) +20V, -5V
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Package Tube