Infineon Technologies
Product No:
IMZA120R014M1HXKSA1
Manufacturer:
Package:
PG-TO247-4-8
Datasheet:
-
Description:
SIC DISCRETE
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$28.159425
$28.159425
10
$25.343483
$253.43483
50
$22.52754
$1126.377
100
$19.711597
$1971.1597
500
$19.148409
$9574.2045
1000
$18.77295
$18772.95
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Operating Temperature | -55°C ~ 175°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 4580 nF @ 25 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 18 V |
Mounting Type | Through Hole |
Rds On (Max) @ Id, Vgs | 18.4mOhm @ 54.3A, 18V |
Product Status | Active |
Vgs(th) (Max) @ Id | 5.2V @ 23.4mA |
Supplier Device Package | PG-TO247-4-8 |
Drain to Source Voltage (Vdss) | 1200 V |
Power Dissipation (Max) | 455W (Tc) |
Series | CoolSiC™ |
Package / Case | TO-247-4 |
Technology | SiCFET (Silicon Carbide) |
Current - Continuous Drain (Id) @ 25°C | 127A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | +20V, -5V |
Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
Package | Tube |