IPA60R180P7XKSA1
detaildesc

IPA60R180P7XKSA1

Infineon Technologies

Product No:

IPA60R180P7XKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO220 Full Pack

Datasheet:

-

Description:

MOSFET N-CHANNEL 650V 18A TO220

Quantity:

Delivery:

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Payment:

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In Stock : 568

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.41372

    $1.41372

  • 10

    $1.272348

    $12.72348

  • 50

    $1.130976

    $56.5488

  • 100

    $0.989604

    $98.9604

  • 500

    $0.96133

    $480.665

  • 1000

    $0.94248

    $942.48

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1081 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 180mOhm @ 5.6A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 280µA
Supplier Device Package PG-TO220 Full Pack
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 26W (Tc)
Series CoolMOS™ P7
Package / Case TO-220-3 Full Pack
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IPA60R