IPA65R110CFDXKSA2

Infineon Technologies

Product No:

IPA65R110CFDXKSA2

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Package:

PG-TO220-FP

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Description:

MOSFET N-CH 650V 31.2A TO220

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	3240 pF @ 100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	118 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	110mOhm @ 12.7A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 1.3mA
Supplier Device Package	PG-TO220-FP
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	34.7W (Tc)
Series	CoolMOS™ CFD2
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	31.2A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IPA65R