IPA65R125C7XKSA1
detaildesc

IPA65R125C7XKSA1

Infineon Technologies

Product No:

IPA65R125C7XKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO220-FP

Datasheet:

-

Description:

MOSFET N-CH 650V 10A TO220-FP

Quantity:

Delivery:

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Payment:

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In Stock : 234

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.82744

    $2.82744

  • 10

    $2.544696

    $25.44696

  • 50

    $2.261952

    $113.0976

  • 100

    $1.979208

    $197.9208

  • 500

    $1.922659

    $961.3295

  • 1000

    $1.88496

    $1884.96

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1670 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 125mOhm @ 8.9A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 440µA
Supplier Device Package PG-TO220-FP
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 32W (Tc)
Series CoolMOS™ C7
Package / Case TO-220-3 Full Pack
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IPA65R