IPA65R650CEXKSA1
detaildesc

IPA65R650CEXKSA1

Infineon Technologies

Product No:

IPA65R650CEXKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO220 Full Pack

Datasheet:

-

Description:

MOSFET N-CH 650V 7A TO220

Quantity:

Delivery:

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Payment:

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In Stock : 102

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.552

    $0.552

  • 10

    $0.483

    $4.83

  • 50

    $0.414

    $20.7

  • 100

    $0.3795

    $37.95

  • 500

    $0.36225

    $181.125

  • 1000

    $0.345

    $345

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Product Information

Parameter Info

User Guide

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 650mOhm @ 2.1A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 210µA
Supplier Device Package PG-TO220 Full Pack
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 28W (Tc)
Series CoolMOS™ CE
Package / Case TO-220-3 Full Pack
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk