IPAN60R125PFD7SXKSA1

Infineon Technologies

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PG-TO220-FP

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MOSFET N-CH 650V 25A TO220

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1503 pF @ 400 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	36 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	125mOhm @ 7.8A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 390µA
Supplier Device Package	PG-TO220-FP
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	32W (Tc)
Series	CoolMOS™PFD7
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IPAN60