IPAN65R650CEXKSA1
Infineon Technologies
Product No:
IPAN65R650CEXKSA1
Manufacturer:
Package:
PG-TO220-FP
Datasheet:
-
Description:
MOSFET N-CH 650V 10.1A TO220
Quantity:
Delivery:
Payment:
In Stock : 346
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.691583
$0.691583
10
$0.622424
$6.22424
50
$0.553266
$27.6633
100
$0.484108
$48.4108
500
$0.470276
$235.138
1000
$0.461055
$461.055
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Product Information
Parameter Info
User Guide
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 100 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 2.1A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.5V @ 210µA |
| Supplier Device Package | PG-TO220-FP |
| Drain to Source Voltage (Vdss) | 650 V |
| Power Dissipation (Max) | 28W (Tc) |
| Series | CoolMOS™ |
| Package / Case | TO-220-3 Full Pack |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 10.1A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tube |
| Base Product Number | IPAN65 |
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