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IPAW60R360P7SXKSA1
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IPAW60R360P7SXKSA1

Infineon Technologies

Product No:

IPAW60R360P7SXKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO220 Full Pack

Datasheet:

-

Description:

MOSFET N-CH 650V 9A TO220

Quantity:

Delivery:

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Payment:

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In Stock : 16

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.75625

    $2.75625

  • 10

    $2.480625

    $24.80625

  • 50

    $2.205

    $110.25

  • 100

    $1.929375

    $192.9375

  • 500

    $1.87425

    $937.125

  • 1000

    $1.8375

    $1837.5

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Product Information

Parameter Info

User Guide

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 555 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 360mOhm @ 2.7A, 10V
Product Status Not For New Designs
Vgs(th) (Max) @ Id 4V @ 140µA
Supplier Device Package PG-TO220 Full Pack
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 22W (Tc)
Series CoolMOS™ P7
Package / Case TO-220-3 Full Pack
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IPAW60