Infineon Technologies
Product No:
IPB011N04LGATMA1
Manufacturer:
Package:
PG-TO263-7-3
Datasheet:
-
Description:
MOSFET N-CH 40V 180A TO263-7
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$2.59875
$2.59875
10
$2.338875
$23.38875
50
$2.079
$103.95
100
$1.819125
$181.9125
500
$1.76715
$883.575
1000
$1.7325
$1732.5
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Operating Temperature | -55°C ~ 175°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 29000 pF @ 20 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 346 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 1.1mOhm @ 100A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 2V @ 200µA |
Supplier Device Package | PG-TO263-7-3 |
Drain to Source Voltage (Vdss) | 40 V |
Power Dissipation (Max) | 250W (Tc) |
Series | OptiMOS™ |
Package / Case | TO-263-7, D²Pak (6 Leads + Tab) |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Package | Tape & Reel (TR) |
Base Product Number | IPB011 |