IPB011N04LGATMA1
detaildesc

IPB011N04LGATMA1

Infineon Technologies

Product No:

IPB011N04LGATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-7-3

Datasheet:

-

Description:

MOSFET N-CH 40V 180A TO263-7

Quantity:

Delivery:

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Payment:

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In Stock : 1550

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.59875

    $2.59875

  • 10

    $2.338875

    $23.38875

  • 50

    $2.079

    $103.95

  • 100

    $1.819125

    $181.9125

  • 500

    $1.76715

    $883.575

  • 1000

    $1.7325

    $1732.5

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 29000 pF @ 20 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 346 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.1mOhm @ 100A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 200µA
Supplier Device Package PG-TO263-7-3
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 250W (Tc)
Series OptiMOS™
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number IPB011