Infineon Technologies
Product No:
IPB011N04NF2SATMA1
Manufacturer:
Package:
PG-TO263-3
Datasheet:
-
Description:
TRENCH <= 40V
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$2.295562
$2.295562
10
$2.066006
$20.66006
50
$1.83645
$91.8225
100
$1.606894
$160.6894
500
$1.560982
$780.491
1000
$1.530375
$1530.375
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Operating Temperature | -55°C ~ 175°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 15000 pF @ 20 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 315 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 1.15mOhm @ 100A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 3.4V @ 249µA |
Supplier Device Package | PG-TO263-3 |
Drain to Source Voltage (Vdss) | 40 V |
Power Dissipation (Max) | 3.8W (Ta), 375W (Tc) |
Series | StrongIRFET™2 |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 43A (Ta), 201A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Package | Tape & Reel (TR) |
Base Product Number | IPB011 |