Home / Single FETs, MOSFETs / IPB011N04NF2SATMA1
IPB011N04NF2SATMA1
detaildesc

IPB011N04NF2SATMA1

Infineon Technologies

Product No:

IPB011N04NF2SATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

Datasheet:

-

Description:

TRENCH <= 40V

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 53

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.295562

    $2.295562

  • 10

    $2.066006

    $20.66006

  • 50

    $1.83645

    $91.8225

  • 100

    $1.606894

    $160.6894

  • 500

    $1.560982

    $780.491

  • 1000

    $1.530375

    $1530.375

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 15000 pF @ 20 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 315 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.15mOhm @ 100A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.4V @ 249µA
Supplier Device Package PG-TO263-3
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 3.8W (Ta), 375W (Tc)
Series StrongIRFET™2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 43A (Ta), 201A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number IPB011