Infineon Technologies
Product No:
IPB015N04LGATMA1
Manufacturer:
Package:
PG-TO263-3
Datasheet:
-
Description:
MOSFET N-CH 40V 120A D2PAK
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$3.445785
$3.445785
10
$3.101207
$31.01207
50
$2.756628
$137.8314
100
$2.41205
$241.205
500
$2.343134
$1171.567
1000
$2.29719
$2297.19
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Operating Temperature | -55°C ~ 175°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 28000 pF @ 25 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 346 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 1.5mOhm @ 100A, 10V |
Product Status | Not For New Designs |
Vgs(th) (Max) @ Id | 2V @ 200µA |
Supplier Device Package | PG-TO263-3 |
Drain to Source Voltage (Vdss) | 40 V |
Power Dissipation (Max) | 250W (Tc) |
Series | OptiMOS™ |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Package | Tape & Reel (TR) |
Base Product Number | IPB015 |