IPB015N04LGATMA1
detaildesc

IPB015N04LGATMA1

Infineon Technologies

Product No:

IPB015N04LGATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

Datasheet:

-

Description:

MOSFET N-CH 40V 120A D2PAK

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 46

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.445785

    $3.445785

  • 10

    $3.101207

    $31.01207

  • 50

    $2.756628

    $137.8314

  • 100

    $2.41205

    $241.205

  • 500

    $2.343134

    $1171.567

  • 1000

    $2.29719

    $2297.19

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 28000 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 346 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.5mOhm @ 100A, 10V
Product Status Not For New Designs
Vgs(th) (Max) @ Id 2V @ 200µA
Supplier Device Package PG-TO263-3
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 250W (Tc)
Series OptiMOS™
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number IPB015