IPB015N08N5ATMA1
detaildesc

IPB015N08N5ATMA1

Infineon Technologies

Product No:

IPB015N08N5ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-7

Datasheet:

-

Description:

MOSFET N-CH 80V 180A TO263-7

Quantity:

Delivery:

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Payment:

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In Stock : 1143

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $5.657873

    $5.657873

  • 10

    $5.092085

    $50.92085

  • 50

    $4.526298

    $226.3149

  • 100

    $3.960511

    $396.0511

  • 500

    $3.847353

    $1923.6765

  • 1000

    $3.771915

    $3771.915

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 16900 pF @ 40 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 222 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.5mOhm @ 100A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.8V @ 279µA
Supplier Device Package PG-TO263-7
Drain to Source Voltage (Vdss) 80 V
Power Dissipation (Max) 375W (Tc)
Series OptiMOS™
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number IPB015