IPB016N06L3GATMA1
detaildesc

IPB016N06L3GATMA1

Infineon Technologies

Product No:

IPB016N06L3GATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-7

Datasheet:

-

Description:

MOSFET N-CH 60V 180A TO263-7

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 7289

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.709472

    $2.709472

  • 10

    $2.438525

    $24.38525

  • 50

    $2.167578

    $108.3789

  • 100

    $1.896631

    $189.6631

  • 500

    $1.842441

    $921.2205

  • 1000

    $1.806315

    $1806.315

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 28000 pF @ 30 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 166 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.6mOhm @ 100A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 196µA
Supplier Device Package PG-TO263-7
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 250W (Tc)
Series OptiMOS™
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number IPB016