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IPB017N10N5LFATMA1
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IPB017N10N5LFATMA1

Infineon Technologies

Product No:

IPB017N10N5LFATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-7

Datasheet:

-

Description:

MOSFET N-CH 100V 180A TO263-7

Quantity:

Delivery:

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Payment:

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In Stock : 1000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $5.401956

    $5.401956

  • 10

    $4.86176

    $48.6176

  • 50

    $4.321565

    $216.07825

  • 100

    $3.781369

    $378.1369

  • 500

    $3.67333

    $1836.665

  • 1000

    $3.601304

    $3601.304

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 840 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 195 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.7mOhm @ 100A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.1V @ 270µA
Supplier Device Package PG-TO263-7
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 313W (Tc)
Series OptiMOS™-5
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPB017