IPB019N08N5ATMA1
Infineon Technologies
Product No:
IPB019N08N5ATMA1
Manufacturer:
Package:
PG-TO263-7
Datasheet:
-
Description:
MOSFET N-CH 80V 180A TO263-7
Quantity:
Delivery:
Payment:
In Stock : 426
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.575
$1.575
10
$1.4175
$14.175
50
$1.26
$63
100
$1.1025
$110.25
500
$1.071
$535.5
1000
$1.05
$1050
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 8970 pF @ 40 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 123 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 1.95mOhm @ 100A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.8V @ 154µA |
| Supplier Device Package | PG-TO263-7 |
| Drain to Source Voltage (Vdss) | 80 V |
| Power Dissipation (Max) | 224W (Tc) |
| Series | OptiMOS™ 5 |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab) |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Package | Tape & Reel (TR) |
| Base Product Number | IPB019 |
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