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IPB020N10N5LFATMA1
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IPB020N10N5LFATMA1

Infineon Technologies

Product No:

IPB020N10N5LFATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

Datasheet:

-

Description:

MOSFET N-CH 100V 120A TO263-3

Quantity:

Delivery:

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Payment:

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In Stock : 18

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.811815

    $3.811815

  • 10

    $3.430633

    $34.30633

  • 50

    $3.049452

    $152.4726

  • 100

    $2.668271

    $266.8271

  • 500

    $2.592034

    $1296.017

  • 1000

    $2.54121

    $2541.21

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 840 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 195 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2mOhm @ 100A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.1V @ 270µA
Supplier Device Package PG-TO263-3
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 313W (Tc)
Series OptiMOS™-5
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPB020