Infineon Technologies
Product No:
IPB020N10N5LFATMA1
Manufacturer:
Package:
PG-TO263-3
Datasheet:
-
Description:
MOSFET N-CH 100V 120A TO263-3
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$3.811815
$3.811815
10
$3.430633
$34.30633
50
$3.049452
$152.4726
100
$2.668271
$266.8271
500
$2.592034
$1296.017
1000
$2.54121
$2541.21
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Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 840 pF @ 50 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 195 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 2mOhm @ 100A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 4.1V @ 270µA |
Supplier Device Package | PG-TO263-3 |
Drain to Source Voltage (Vdss) | 100 V |
Power Dissipation (Max) | 313W (Tc) |
Series | OptiMOS™-5 |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Package | Tape & Reel (TR) |
Base Product Number | IPB020 |