IPB025N08N3GATMA1
detaildesc

IPB025N08N3GATMA1

Infineon Technologies

Product No:

IPB025N08N3GATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

Datasheet:

-

Description:

MOSFET N-CH 80V 120A D2PAK

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 9383

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.267338

    $3.267338

  • 10

    $2.940604

    $29.40604

  • 50

    $2.61387

    $130.6935

  • 100

    $2.287136

    $228.7136

  • 500

    $2.221789

    $1110.8945

  • 1000

    $2.178225

    $2178.225

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 14200 pF @ 40 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 206 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2.5mOhm @ 100A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 270µA
Supplier Device Package PG-TO263-3
Drain to Source Voltage (Vdss) 80 V
Power Dissipation (Max) 300W (Tc)
Series OptiMOS™
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number IPB025