IPB026N06NATMA1
detaildesc

IPB026N06NATMA1

Infineon Technologies

Product No:

IPB026N06NATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

Datasheet:

-

Description:

MOSFET N-CH 60V 25A/100A D2PAK

Quantity:

Delivery:

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Payment:

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In Stock : 2493

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.537515

    $1.537515

  • 10

    $1.383763

    $13.83763

  • 50

    $1.230012

    $61.5006

  • 100

    $1.076261

    $107.6261

  • 500

    $1.04551

    $522.755

  • 1000

    $1.02501

    $1025.01

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 4100 pF @ 30 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2.6mOhm @ 100A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.8V @ 75µA
Supplier Device Package PG-TO263-3
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 3W (Ta), 136W (Tc)
Series OptiMOS™
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 25A (Ta), 100A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number IPB026