IPB03N03LB G
detaildesc

IPB03N03LB G

Infineon Technologies

Product No:

IPB03N03LB G

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

Datasheet:

pdf

Description:

MOSFET N-CH 30V 80A D2PAK

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 528

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.9215

    $1.9215

  • 10

    $1.72935

    $17.2935

  • 50

    $1.5372

    $76.86

  • 100

    $1.34505

    $134.505

  • 500

    $1.30662

    $653.31

  • 1000

    $1.281

    $1281

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 7624 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 59 nC @ 5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2.8mOhm @ 55A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 2V @ 100µA
Supplier Device Package PG-TO263-3
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 150W (Tc)
Series OptiMOS™
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number IPB03N