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IPB043N10NF2SATMA1
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IPB043N10NF2SATMA1

Infineon Technologies

Product No:

IPB043N10NF2SATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

Datasheet:

-

Description:

AUTOMOTIVE MOSFET

Quantity:

Delivery:

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In Stock : 32

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.99792

    $0.99792

  • 10

    $0.898128

    $8.98128

  • 50

    $0.798336

    $39.9168

  • 100

    $0.698544

    $69.8544

  • 500

    $0.678586

    $339.293

  • 1000

    $0.66528

    $665.28

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 4000 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 85 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 4.35mOhm @ 80A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.8V @ 93µA
Supplier Device Package PG-TO263-3
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 3.8W (Ta), 167W (Tc)
Series StrongIRFET™ 2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 21A (Ta), 135A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)