Infineon Technologies
Product No:
IPB050N10NF2SATMA1
Manufacturer:
Package:
PG-TO263-3
Datasheet:
-
Description:
TRENCH >=100V
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.930982
$0.930982
10
$0.837884
$8.37884
50
$0.744786
$37.2393
100
$0.651688
$65.1688
500
$0.633068
$316.534
1000
$0.620655
$620.655
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Operating Temperature | -55°C ~ 175°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 50 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 76 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 5.05mOhm @ 60A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 3.8V @ 85µA |
Supplier Device Package | PG-TO263-3 |
Drain to Source Voltage (Vdss) | 100 V |
Power Dissipation (Max) | 150W (Tc) |
Series | StrongIRFET™ 2 |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 103A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Package | Tape & Reel (TR) |
Base Product Number | IPB050N |