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IPB050N10NF2SATMA1
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IPB050N10NF2SATMA1

Infineon Technologies

Product No:

IPB050N10NF2SATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

Datasheet:

-

Description:

TRENCH >=100V

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 477

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.930982

    $0.930982

  • 10

    $0.837884

    $8.37884

  • 50

    $0.744786

    $37.2393

  • 100

    $0.651688

    $65.1688

  • 500

    $0.633068

    $316.534

  • 1000

    $0.620655

    $620.655

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3600 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 76 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 5.05mOhm @ 60A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.8V @ 85µA
Supplier Device Package PG-TO263-3
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 150W (Tc)
Series StrongIRFET™ 2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 103A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number IPB050N