IPB065N15N3GATMA1
detaildesc

IPB065N15N3GATMA1

Infineon Technologies

Product No:

IPB065N15N3GATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-7

Datasheet:

-

Description:

MOSFET N-CH 150V 130A TO263-7

Quantity:

Delivery:

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Payment:

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In Stock : 1342

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $4.171703

    $4.171703

  • 10

    $3.754532

    $37.54532

  • 50

    $3.337362

    $166.8681

  • 100

    $2.920192

    $292.0192

  • 500

    $2.836758

    $1418.379

  • 1000

    $2.781135

    $2781.135

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 7300 pF @ 75 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 93 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 6.5mOhm @ 100A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 270µA
Supplier Device Package PG-TO263-7
Drain to Source Voltage (Vdss) 150 V
Power Dissipation (Max) 300W (Tc)
Series OptiMOS™
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 130A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Package Tape & Reel (TR)
Base Product Number IPB065